Author: Irisboyev, Farkhod Boymirzayevich; Mukhtorov, Doston Naim ugli

Annotation: The implantation of medium and high energy beams is used for the formation of p- or n-type compounds in semiconductors. In recent years, they have also been used to obtain nanodots in deep layers. Low-energy ion implantation is mainly used to modify the surface layers of solids, and to obtain nanophases, nanoclusters, nanocrystals, and nanofilms.

Keywords: Low energy ion implantation, modification process, diffusion arrangement, ion-doped layer, ion-deformed layer, single crystal nanomaterials, nanopleons, laser technologies, emission properties.

Pages in journal: 122 - 125