Author: Muminov, Islomjon Arabboyevich; Sobirova, Dilnoza Davlatjon qizi; Toshqo'ziyev, Rahmatulla A'zamjon o'g'li; Saidjonova, Muqaddam Sobirjon qizi

Annotation: When a thin p-n junction is observed, the junction region is considered to be very thin (surface active) so that the charge carriers can pass through the main charge flow mobility layer without recombination. This is the case is represented by the inequality, where - the thickness of the barrier layer and - diffusion length. The contacts between the semiconductor and the metal electrodes are anti-disruptive and are located away from the junction. This ensures that any unbalanced charge carriers are fully recombined before reaching the contacts. So we can say that the voltage drop in the circuit is also ignored and all external potentials are applied across the p-n junction. This article discusses this in detail.

Keywords: Theory of thin p-n junction, physical properties of charge carrier, short junction, main charge surface layer, recombination, barrier layer thickness, diffusion length, external potential, surface recombination, excess charge carrier concentration, linear recombination.

Pages in journal: 92 - 98