Author: Tolaboyev, Dilmuhammad Xayitali o’g’li; Mirzayev, Valijon To’lqinovich; Axmadjonov, Mexriddin Faxridinovich; Abdullayev, Sherzod Shuhratjon o’g’li; Raximjonov, Jahongir Saydaxmat o’g’li

Annotation: The appearance of internal defects in a silicon lattice usually occurs as a result of accidental thermal motion of the atoms inside the lattice. At room temperature, the heat energy is small compared to the bonding energy of the grid, so very few defects are formed; however, this number is not zero, so the spontaneous occurrence of defects can be characterized by thermodynamics.

Keywords: semiconductor, entropy, configuration entropy, energy, free energy, vacancy

Pages in journal: 231 - 240