Author: Rahmonqulova, Nargiza Baxromjon qizi; Eraliyeva, Nargizaxon Ulug’bek qizi; Madaminov, Jaxongir Shuxratbek o’g’li
Annotation: This paper discusses the widely used semiconductor silicon in practice as a device for converting light energy into electrical energy based on the construction of a p-n junction or Schottky barrier based on a semiconductor crystal.
Keywords: Schottky barrier, photoelectric device, volt-ampere characteristics, anti-reflection layer, transmittance zone, photogenerated charge.
Pages in journal: 1380 - 1386
